3-YB1KGW-06 - Yb(1%):KGW Laser Crystal, 5 x 5 x 5 mm, uncoated

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3-YB1KGW-06 - Yb(1%):KGW Laser Crystal, 5 x 5 x 5 mm, uncoated
962,00 $US
Yb:KGW and Yb:KYW crystals are used as lasing materials to generate ultrashort high power pulses. Yb:KGW can be used as ultrashort pulses amplifiers and these crystals are one of the best materials for high power thin disk lasers.




The broad spectral emission band of Yb:KYW allows the tuning of the laser radiation over 1020-1060 nm range and the generation of femtosecond pulses shorter than 70 fs. Enhanced storage capacity, wide absorption spectrum at 980 nm and high absorption of pump radiation in a small crystal region allow an efficient use of diode laser pump.




As compared to YAG or glasses used as hosts for Yb3+, KYW and KGdW have the advantage of a larger absorption cross section than YAG, which decreases the minimum pump intensity necessary to achieve transparency in the quasi-two-level system of ytterbium.
Traitements uncoated
Dimensions, mm 5 x 5 x 5
End surfaces Brewster-angle cut
Material Yb(1%):KGW
Delivery 2-4 weeks
Description

Détails

Yb:KGW and Yb:KYW crystals are used as lasing materials to generate ultrashort high power pulses. Yb:KGW can be used as ultrashort pulses amplifiers and these crystals are one of the best materials for high power thin disk lasers.

The broad spectral emission band of Yb:KYW allows the tuning of the laser radiation over 1020-1060 nm range and the generation of femtosecond pulses shorter than 70 fs. Enhanced storage capacity, wide absorption spectrum at 980 nm and high absorption of pump radiation in a small crystal region allow an efficient use of diode laser pump.

As compared to YAG or glasses used as hosts for Yb3+, KYW and KGdW have the advantage of a larger absorption cross section than YAG, which decreases the minimum pump intensity necessary to achieve transparency in the quasi-two-level system of ytterbium.
Fonctionnalités
  • High absorption coefficient @ 980 nm
  • High stimulated emission cross section
  • Low laser threshold
  • Extremely low quantum defect
  • Broad output at 1020-1060 nm
  • High slope efficiency with diode pumping (>55%)
  • High Yb-doping concentration
OU