Our series of terahertz sources (IMPATT diodes) is a range of silicon double drift diodes with 0.6 µm transit region mounted on copper heat sink. Layers in double-drift diodes are: a heavily doped (p+)-region, a moderately doped region, a moderately doped n-region, and a heavily doped (n+)-region. The (p+) - and (n+) - regions allow ohmic electrical contacts to be made to the external circuit. The device relies on negative resistance to generate and sustain the oscillation.
Laserand now offering upgraded version of terahertz generators. The upgraded thz generator is outfitted with a protective isolator, which significantly improves output power stability. From now on you can order the THz source with either rigidly fixed horn antenna or WR- flange of your choice. Typical output rfpower of the generator with optimized frequency at 100 GHz can reach up to 100 mW. This allows to use them together with multipliers to reach frequencies in the far terahertz spectral range.
In addition, our sources feature ergonomic design and ease of use. Laserand can supply THz generators with optional attenuator and switch sections.